Self-compensation in highly n-type InN

Defect studies in n-type indium nitride

Aalto University, P.O. Box 11000, FI-00076 Aalto www.aalto.fi Author Christian Rauch Name of the doctoral dissertation Defect studies in n-type indium nitride Publisher School of Science Unit Department of Applied Physics Series Aalto University publication series DOCTORAL DISSERTATIONS 52/2012 Field of research Engineering Physics, Physics Manuscript submitted 28 February 2012 Manuscript revis...

Evaluation of threading dislocation densities in In- and N-face InN

The threading dislocation TD structure and density has been studied in Inand N-face InN films grown on GaN by plasma-assisted molecular beam epitaxy. The TD densities were determined by nondestructive x-ray diffraction rocking curve measurements in on-axis symmetric and off-axis skew symmetric geometries and calibrated by transmission electron microscopy measurements. TD densities were dominate...

Correlation between switching to n-type conductivity and structural defects in highly Mg-doped InN

InN: A material with photovoltaic promise and challenges

The potential of InN as a photovoltaic material is described. For solar applications, several key developments such as p-type doping and solid-state rectifying junctions have yet to be demonstrated. However, the ability of InGaN materials to optimally span the solar spectrum offers a tantalizing solution for high-efficiency photovoltaics albeit in an inherently lattice mismatched material syste...

Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy

Diamond is not only a free standing highly transparent window but also a promising carrier confinement layer for InN based devices, yet little is known of the band offsets in InN/diamond system. X-ray photoelectron spectroscopy was used to measure the energy discontinuity in the valence band offset (VBO) of InN/diamond heterostructure. The value of VBO was determined to be 0.39 ± 0.08 eV and a ...